Dr. Daniel Hiller organizes Symposium P at the Spring-EMRS 2017 in Strasbourg

    02.03.2017 07:45
    The Symposium "Silicon & Silicon Nanostructures: From Recent Fundamental Research to Novel Applications" will take place from 22.-26.05.2017, featuring 20 invited speakers, 53 contributed talks and more than 50 posters.

    This symposium intends to cover the full range from theory/modelling to synthesis/fabrication and device characterization in silicon and Si-nanostructure research.

    In recent years, massive advancements were made in fabricating, measuring, modelling and understanding silicon nanostructures. However, the focal point of interest shifted from nanostructure-volume properties (like quantum confinement) to surface-/interface-related effects and the interaction with impurity atoms or ligands. Several interesting effects were discovered (e.g. surface functionalization that switches the bandgap type to direct, interface charge transfer depending on the dielectric matrix material, to name a few). Whereas the inability to utilize classical electronic dopants in Si nanostructures is gradually revealed, very high doping levels give rise to plasmonic effects in Si QDs as investigated in e.g. biomarkers. Si nanocrystal based LEDs are envisaged for all-Si based optical communication but efficient hole injection and long-term stability require further research. In analogy to graphene, 2D-monolayers of silicene are currently investigated with unforeseeable opportunities for fundamental research and application. Silicon nanostructures are also an emerging material in gas- and biomedical-sensing, where thorough understanding of interface and surface effects is mandatory to identify and quantify target chemicals.

    While Si nanostructure researchers increasingly gain a more comprehensive understanding, CMOS technology continues to decrease feature sizes below 10 nm where all those effects mentioned above come into play. Currently, this causes mainly deteriorations of performance and reliability (e.g. statistical distribution of discrete dopant numbers). On the bright side, deep insight into nanoscale Si-interface physics holds potential to discover alternatives to conventional Si doping (e.g. undoped reconfigurable Si NW FETs).

    From a macroscopic viewpoint, findings at the nanoscale can also help to improve bulk-Si devices such as photovoltaic devices. Heterojunction with intrinsic thin layer (HIT) solar cells require passivating tunneling contacts where thorough understanding of surface/interface effects at the nanoscale offers promising routes for optimization.

    See the EMRS-website for more information:

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